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| jmnic product specification silicon npn power transistors 2SC1922 description ? with to-3 package ? high breakdown voltage ? high speed switching applications ? for tv horizontal output applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 2.5 a p t total power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 2.5 ?? /w fig.1 simplified outline (to-3) and symbol
jmnic product specification 2 silicon npn power transistors 2SC1922 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 800 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 6 v v cesat collector-emitter saturation voltage i c =2a; i b =0.6a 5.0 v v besat base-emitter saturation voltage i c =2a; i b =0.6a 1.5 v i cbo collector cut-off current v cb =600v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe dc current gain i c =0.5a ; v ce =5v 8 40 jmnic product specification 3 silicon npn power transistors 2SC1922 package outline fig.2 outline dimensions |
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